v drm volts v rrm 200 400 600 i t(av) 0.3 amps v tsm 6 amps i gtm 0.1 amps p gm 0.1 watts p g(av) 0.05 watts i drm 10 m amps i rrm 200 v tm 1.7 volts i ho 5 mamps critical 5 volts/ m sec dv/dt i gt 200 m amps v gt 0.8 volts t gt 2.2 m sec r q jc 75 o c/watt t stg -40 to 150 o c t oper -40 to 110 o c repetitive peak off-state voltage and repetitive peak reverse voltage @ t c = 125 o c fcr0320s FCR0340S fcr0360s rms on-state current @ t c = 50 o c and conduction angle of 180 o peak-surge on-state current one cycle @ 50hz or 60hz peak gate-trigger current for 3 m s max. peak gate-power dissipation @ i gt < i gtm average gate-power dissipation peak off-state current (1) t c = 25 o c @ rated reverse voltage t c = 125 o c maximum on-state voltage @ t c = 25 o c and i t = 0.3a dc holding current (1), gate open, t c = 25 o c critical rate-of-rise of off-state voltage (1) gate open, t c = 110 o c dc gate -trigger current for anode (2) dc gate -trigger voltage for anode (2) gate-controlled turn-on time, t d + t r i gt = 10ma, t c = 25 o c typical thermal resistance junction to case storage temperature range operating temperature range description data sheet 0.3 amp silicon controlled rectifiers fcr03s series maximum ratings and electrical characteristics symbol value units notes: (1) r g-k = 1k w . (2) voltage = 7vdc, r l = 100 w , t c = 25 o c. gate mechanical dimensions .110 .060 .037 .037 .115 .016 .043 .004 .016 1 2 3 features n directly driven with ic and mos device n void-free glass passivated chips n available in voltage ratings from 200 to 600 volts n sensitive gate trigger current cathode anode
r gk (k w) holding current i h / i h(1k w)w) w)w) w) 10 -3 10 -2 10 -1 10 0 10 1 holding current vs r gk r gk (k w) 10 -3 10 -2 10 -1 10 0 10 1 gate trigger current i gt / i gt(1k w)w) w)w) w) gate trigger current vs r gk 0.0 0.5 1 1.5 2.0 2.5 3.0 0.001 0.01 0.1 1 10 on-state current v tm (v ) on-state voltage v tm (v ) on-state voltage vs v tm 10 -1 10 0 10 2 10 1 gate trigger current i gt / i gt(1k w)w) w)w) w) 0.01 0.1 1 10 0 40 80 120 160 ambient temperature t a ( c) gate trigger current vs t a v ak = 7 v r=100 w ambient temperature t a ( c) ambient temperature t a ( c) holding current i h (( (( ( ma )) )) ) gate trigge voltage v gt (mv) gate trigger voltage vs t a holding current vs t a 0 40 120 160 80 0 40 120 160 80 10 -1 10 0 10 1 0 8 4 2 6 800 700 600 500 400 300 data sheet 0.3 amp silicon controlled rectifiers
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